Modeling Capacitances of a Vertical Rf Power Transistor
نویسندگان
چکیده
This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD
منابع مشابه
Influence of High-κ Spacer on Analog/RF Performance of Asymmetric Underlap Double Gate MOSFET
Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...
متن کاملImprovement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering
In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...
متن کاملGraphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures
This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...
متن کاملCharge Steered RF PA
iii Summary This master thesis describes the development of a new type RF PA and upconverter combination. Instead of the normally used voltage steering the amplifier uses charge steering. The parasitic capacitances of the MOSFET in combination with using charge steering form a feedback network that linearizes the amplifier. The developed device is a switching amplifier. For good behavior it use...
متن کاملSimultaneous switching noise analysis using application specific device modeling
In this paper, we introduce an application-specific device modeling methodology to develop simple device model that accurately tracks the actual device I-V characteristics in relevant but bounded operating regions. We have specifically used a simple MOSFET model to precisely analyze the switching noises generated on a chip due to simultaneous driving of chip output pads by bulky buffer gates. P...
متن کامل